PART |
Description |
Maker |
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
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MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier Low Noise Amplifier 1.5 - 1.6 GHz GT 35C 7#12,28#16 SKT RECP
|
MA-Com MACOM[Tyco Electronics]
|
MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大 GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier From old datasheet system MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd. Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
AA035N1-00 AA035N2-00 |
286 GHz GaAs MMIC Low Noise Amplifier 28-36 GHz GaAs MMIC Low Noise Amplifier GT 12C 6#12 6#12 PIN PLUG
|
http:// Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
|
TLT-8-2014 TLT-8-2013 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TLT-13-6016 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
TLA-18-6006 TLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
CLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
|
CLA-18-6004 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
CLA-13-6014 CLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|